PSMN8R5-100ESQ

new-10%

Manufacturer part number:PSMN8R5-100ESQ

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 100V 100A I2PAK

Case Package:SOT-23

Datasheet:PSMN8R5-100ESQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	263W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	263W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5512pF @ 50V
Current - Continuous Drain (Id) @ 25°C	100A Tj
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	43 ns
Turn-Off Delay Time	87 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.0085Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	429A
Avalanche Energy Rating (Eas)	219 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free