KSP06BU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 100MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

KSP06BU Features

the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

KSP06BU Applications

There are a lot of ON Semiconductor KSP06BU applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface