FZT493ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT493ATA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
2W
Power - Max
2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 250mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Max Breakdown Voltage
60V
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.291419
$1.291419
10
$1.218320
$12.1832
100
$1.149358
$114.9358
500
$1.084300
$542.15
1000
$1.022925
$1022.925
FZT493ATA Product Details
FZT493ATA Overview
This device has a DC current gain of 300 @ 250mA 10V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.An input voltage of 60V volts is the breakdown voltage.Supplier package SOT-223 contains the product.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1A volts at its maximum.
FZT493ATA Features
the DC current gain for this device is 300 @ 250mA 10V the vce saturation(Max) is 500mV @ 100mA, 1A the supplier device package of SOT-223
FZT493ATA Applications
There are a lot of Diodes Incorporated FZT493ATA applications of single BJT transistors.