ZTX696BSTZ Overview

DC current gain in this device equals 150 @ 200mA 5V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.When VCE saturation is 250mV @ 5mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 500mA is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.In the part, the transition frequency is 70MHz.In extreme cases, the collector current can be as low as 500mA volts.

ZTX696BSTZ Features

the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz

ZTX696BSTZ Applications

There are a lot of Diodes Incorporated ZTX696BSTZ applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface