PXTA42,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PXTA42,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1996
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.75
Terminal Position
SINGLE
Terminal Form
FLAT
Base Part Number
PXTA42
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.3W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.22347
$0.22347
2,000
$0.20628
$0.41256
5,000
$0.19482
$0.9741
10,000
$0.18909
$1.8909
PXTA42,115 Product Details
PXTA42,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.The part has a transition frequency of 50MHz.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.
PXTA42,115 Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA a transition frequency of 50MHz
PXTA42,115 Applications
There are a lot of Nexperia USA Inc. PXTA42,115 applications of single BJT transistors.