MJD3055TF Overview
In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 8V @ 3.3A, 10A.The emitter base voltage can be kept at 5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.As you can see, the part has a transition frequency of 2MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.In extreme cases, the collector current can be as low as 10A volts.
MJD3055TF Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055TF Applications
There are a lot of ON Semiconductor MJD3055TF applications of single BJT transistors.
- Inverter
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- Muting
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- Driver
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- Interface
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