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BSN304,126

  • BSN304,126
  • BSN304,126

BSN304,126

BSN304,126

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 6 Ω @ 250mA, 10V ±20V 120pF @ 25V 300V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SOT-23

BSN304,126 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 2.4V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.25A
Drain-source On Resistance-Max 8Ohm
DS Breakdown Voltage-Min 300V
Feedback Cap-Max (Crss) 15 pF
RoHS Status ROHS3 Compliant
BSN304,126 Product Details

BSN304,126 Overview


A device's maximum input capacitance is 120pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 0.25A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 300V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (2.4V 10V) to reduce its overall power consumption.

BSN304,126 Features


a 300V drain to source voltage (Vdss)


BSN304,126 Applications


There are a lot of NXP USA Inc.
BSN304,126 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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