STP6N52K3

new-10%

Manufacturer part number:STP6N52K3

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 525V 5A TO-220

Case Package:SOT-23

Datasheet:STP6N52K3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	SuperMESH3™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Base Part Number	STP6N
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	70W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 50V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	525V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	31 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	5A
Pulsed Drain Current-Max (IDM)	20A
DS Breakdown Voltage-Min	525V
Avalanche Energy Rating (Eas)	110 mJ
Height	15.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free