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BUK7616-55A,118

BUK7616-55A,118

BUK7616-55A,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 16m Ω @ 25A, 10V ±20V 2245pF @ 25V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

BUK7616-55A,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 138W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2245pF @ 25V
Current - Continuous Drain (Id) @ 25°C 65.7A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 65.7A
Drain-source On Resistance-Max 0.016Ohm
Pulsed Drain Current-Max (IDM) 263A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status ROHS3 Compliant
BUK7616-55A,118 Product Details

BUK7616-55A,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.A device's maximum input capacitance is 2245pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 65.7A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 263A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

BUK7616-55A,118 Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 263A.
a 55V drain to source voltage (Vdss)


BUK7616-55A,118 Applications


There are a lot of NXP USA Inc.
BUK7616-55A,118 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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