HUF76419S3ST-F085

new-10%

Manufacturer part number:HUF76419S3ST-F085

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 29A TO-263AB

Case Package:SOT-23

Datasheet:HUF76419S3ST-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
Turn On Delay Time	5.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	28.5nC @ 10V
Rise Time	7.3ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±16V
Fall Time (Typ)	4.6 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	121 mJ
RoHS Status	RoHS Compliant