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NTD3055L104G

NTD3055L104G

NTD3055L104G

ON Semiconductor

NTD3055L104G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD3055L104G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 104MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating25A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.5W Ta 48W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation48W
Case Connection DRAIN
Turn On Delay Time9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time104ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 40.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2701 items

NTD3055L104G Product Details

Description


The NTD3055L104G is a MOSFET ¨C Power, N-Channel, Logic Level, DPAK/IPAK which is designed for use in power supplies, converters, power motor controllers, and bridge circuits where low voltage, high-speed switching is required. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.



Features


  • NTDV and STDV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free and are RoHS Compliant

  • Lower Diode Reverse Recovery Time

  • Lower Reverse Recovery Stored Charge

  • Lower RDS(on)

  • Lower VDS(on)

  • Tighter VSD Specification



Applications


  • Power Motor Controls

  • Bridge Circuits

  • Power Supplies

  • Converters

  • Solar Inverters

  • Automotive Applications


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