NTD3055L104G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NTD3055L104G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
104MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
25A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
1.5W Ta 48W Tj
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
48W
Case Connection
DRAIN
Turn On Delay Time
9.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
104ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±15V
Fall Time (Typ)
40.5 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
15V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
45A
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
NTD3055L104G Product Details
Description
The NTD3055L104G is a MOSFET ¨C Power, N-Channel, Logic Level, DPAK/IPAK which is designed for use in power supplies, converters, power motor controllers, and bridge circuits where low voltage, high-speed switching is required. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
Features
NTDV and STDV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable