FQA48N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQA48N20 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
280W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
50mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
48A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
FQA48N20 Product Details
FQA48N20 Description
FQA48N20 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 200V. The operating temperature of the FQA48N20 is -55??C~150??C TJ and its maximum power dissipation is 280W Tc. FQA48N20 has 3 pins and it is available in Tube packaging way.