FQA48N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQA48N20 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
280W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
50mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
48A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
In-Stock:2478 items
FQA48N20 Product Details
FQA48N20 Description
FQA48N20 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 200V. The operating temperature of the FQA48N20 is -55??C~150??C TJ and its maximum power dissipation is 280W Tc. FQA48N20 has 3 pins and it is available in Tube packaging way.
FQA48N20 Features
High voltage and high reliability
High speed switching
Low forward voltage
FQA48N20 Applications
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
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