APT33N90JCCU2

new-10%

Manufacturer part number:APT33N90JCCU2

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 900V 33A 4-Pin SOT-227

Case Package:SOT-23

Datasheet:APT33N90JCCU2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	290W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	290W
Case Connection	ISOLATED
Turn On Delay Time	70 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	400 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	75A
DS Breakdown Voltage-Min	900V
FET Feature	Super Junction
Radiation Hardening	No
RoHS Status	RoHS Compliant