BUK9880-55A,115

new-10%

Manufacturer part number:BUK9880-55A,115

Manufacturer:NXP USA Inc.

Description:Trans MOSFET N-CH 55V 7A 4-Pin(3+Tab) SOT-223 T/R

Case Package:SOT-23

Datasheet:BUK9880-55A,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	8W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	73m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	584pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 5V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±15V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.089Ohm
Pulsed Drain Current-Max (IDM)	30A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	36 mJ
RoHS Status	ROHS3 Compliant