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BUK9E3R7-60E,127

BUK9E3R7-60E,127

BUK9E3R7-60E,127

NXP USA Inc.

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) I2PAK Rail

SOT-23

BUK9E3R7-60E,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 293W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 13490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.0037Ohm
Pulsed Drain Current-Max (IDM) 758A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 404 mJ
RoHS Status ROHS3 Compliant

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