PHD55N03LTA,118 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 950pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 55A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 220A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 25V in order to maintain normal operation.Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

PHD55N03LTA,118 Features

the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 220A.
a 25V drain to source voltage (Vdss)

PHD55N03LTA,118 Applications

There are a lot of NXP USA Inc.
PHD55N03LTA,118 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools