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PHD98N03LT,118

PHD98N03LT,118

PHD98N03LT,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.9m Ω @ 25A, 10V ±20V 3000pF @ 20V 40nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

PHD98N03LT,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 111W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 20V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0073Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 183 mJ
RoHS Status ROHS3 Compliant
PHD98N03LT,118 Product Details

PHD98N03LT,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 183 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 20V.There is no drain current on this device since the maximum continuous current it can conduct is 75A.There is a peak drain current of 240A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 25V, it should remain above the 25V level.The transistor must receive a 25V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

PHD98N03LT,118 Features


the avalanche energy rating (Eas) is 183 mJ
based on its rated peak drain current 240A.
a 25V drain to source voltage (Vdss)


PHD98N03LT,118 Applications


There are a lot of NXP USA Inc.
PHD98N03LT,118 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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