IRFBE30S

new-10%

Manufacturer part number:IRFBE30S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 800V 4.1A D2PAK

Case Package:SOT-23

Datasheet:IRFBE30S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	4.1A
Number of Channels	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.1A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	33ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	4.1A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	800V
Input Capacitance	1.3nF
Drain to Source Resistance	3Ohm
Rds On Max	3 Ω
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead