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PHD18NQ10T,118

PHD18NQ10T,118

PHD18NQ10T,118

NXP USA Inc.

MOSFET N-CH 100V 18A DPAK

SOT-23

PHD18NQ10T,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series TrenchMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Pin Count 3
Power Dissipation-Max 79W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Source Url Status Check Date 2013-06-14 00:00:00
RoHS Status Non-RoHS Compliant

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