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2N3055AG

2N3055AG

2N3055AG

ON Semiconductor

2N3055AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N3055AG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 115W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 6MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N3055
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 115W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 6MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 4A 2V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 5V @ 7A, 15A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 0.8MHz
Collector Emitter Saturation Voltage 1.1V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 7V
hFE Min 10
Height 26.67mm
Length 39.37mm
Width 8.509mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.40000 $6.4
10 $5.74400 $57.44
100 $4.70660 $470.66
500 $4.00660 $2003.3
1,000 $3.37907 $3.37907
2N3055AG Product Details

2N3055AG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 4A 2V.As it features a collector emitter saturation voltage of 1.1V, it allows for maximum design flexibility.When VCE saturation is 5V @ 7A, 15A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.This device has a current rating of 15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 0.8MHz.Maximum collector currents can be below 15A volts.

2N3055AG Features


the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz

2N3055AG Applications


There are a lot of ON Semiconductor 2N3055AG applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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