2N3055AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2N3055AG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
115W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
15A
Frequency
6MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N3055
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
115W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
6MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 4A 2V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
5V @ 7A, 15A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
0.8MHz
Collector Emitter Saturation Voltage
1.1V
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
7V
hFE Min
10
Height
26.67mm
Length
39.37mm
Width
8.509mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.40000
$6.4
10
$5.74400
$57.44
100
$4.70660
$470.66
500
$4.00660
$2003.3
1,000
$3.37907
$3.37907
2N3055AG Product Details
2N3055AG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 4A 2V.As it features a collector emitter saturation voltage of 1.1V, it allows for maximum design flexibility.When VCE saturation is 5V @ 7A, 15A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.This device has a current rating of 15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 0.8MHz.Maximum collector currents can be below 15A volts.
2N3055AG Features
the DC current gain for this device is 10 @ 4A 2V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 5V @ 7A, 15A the emitter base voltage is kept at 7V the current rating of this device is 15A a transition frequency of 0.8MHz
2N3055AG Applications
There are a lot of ON Semiconductor 2N3055AG applications of single BJT transistors.