NSVBSP19AT1G Overview

In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).When collector current reaches its maximum, it can reach 100mA volts.

NSVBSP19AT1G Features

the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA

NSVBSP19AT1G Applications

There are a lot of ON Semiconductor NSVBSP19AT1G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting