NSVBSP19AT1G Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).When collector current reaches its maximum, it can reach 100mA volts.
NSVBSP19AT1G Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
NSVBSP19AT1G Applications
There are a lot of ON Semiconductor NSVBSP19AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
