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2N3904G

2N3904G

2N3904G

ON Semiconductor

2N3904G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N3904G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Type General Purpose
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N3904
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 60
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.02000 $0.02
500 $0.0198 $9.9
1000 $0.0196 $19.6
1500 $0.0194 $29.1
2000 $0.0192 $38.4
2500 $0.019 $47.5
2N3904G Product Details

2N3904G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.Emitter base voltages of 6V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

2N3904G Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

2N3904G Applications


There are a lot of ON Semiconductor 2N3904G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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