2N4403RLRAG Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.A collector emitter saturation voltage of 750mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.200MHz is present in the transition frequency.As a result, it can handle voltages as low as 40V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

2N4403RLRAG Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

2N4403RLRAG Applications

There are a lot of ON Semiconductor 2N4403RLRAG applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface