2N5190 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5190 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Supplier Device Package
TO-225AA
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
40V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
2N5190
Polarity
NPN
Power - Max
40W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.4V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1.5A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
2MHz
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
2N5190 Product Details
2N5190 Overview
This device has a DC current gain of 25 @ 1.5A 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 1A, 4A.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.Single BJT transistor comes in a supplier device package of TO-225AA.This device displays a 40V maximum voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 4A volts.
2N5190 Features
the DC current gain for this device is 25 @ 1.5A 2V the vce saturation(Max) is 1.4V @ 1A, 4A the current rating of this device is 4A the supplier device package of TO-225AA
2N5190 Applications
There are a lot of ON Semiconductor 2N5190 applications of single BJT transistors.