BC847AWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC847AWT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
225mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic
250mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.05000
$0.05
500
$0.0495
$24.75
1000
$0.049
$49
1500
$0.0485
$72.75
2000
$0.048
$96
2500
$0.0475
$118.75
BC847AWT1 Product Details
BC847AWT1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 500μA, 10mA.The part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC847AWT1 Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 250mV @ 500μA, 10mA a transition frequency of 100MHz
BC847AWT1 Applications
There are a lot of Rochester Electronics, LLC BC847AWT1 applications of single BJT transistors.