ZXTP19060CZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZXTP19060CZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
4.46W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
180MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP19060C
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
4.46W
Case Connection
COLLECTOR
Power - Max
2.4W
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
410mV @ 450mA, 4.5A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
-410mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.736204
$0.736204
10
$0.694532
$6.94532
100
$0.655219
$65.5219
500
$0.618131
$309.0655
1000
$0.583142
$583.142
ZXTP19060CZTA Product Details
ZXTP19060CZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -410mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 410mV @ 450mA, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, the part has a transition frequency of 180MHz.A breakdown input voltage of 60V volts can be used.During maximum operation, collector current can be as low as 4.5A volts.
ZXTP19060CZTA Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of -410mV the vce saturation(Max) is 410mV @ 450mA, 4.5A the emitter base voltage is kept at 7V a transition frequency of 180MHz
ZXTP19060CZTA Applications
There are a lot of Diodes Incorporated ZXTP19060CZTA applications of single BJT transistors.