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ZXTP19060CZTA

ZXTP19060CZTA

ZXTP19060CZTA

Diodes Incorporated

ZXTP19060CZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP19060CZTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 180MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP19060C
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 410mV @ 450mA, 4.5A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 180MHz
Collector Emitter Saturation Voltage -410mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.736204 $0.736204
10 $0.694532 $6.94532
100 $0.655219 $65.5219
500 $0.618131 $309.0655
1000 $0.583142 $583.142
ZXTP19060CZTA Product Details

ZXTP19060CZTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -410mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 410mV @ 450mA, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, the part has a transition frequency of 180MHz.A breakdown input voltage of 60V volts can be used.During maximum operation, collector current can be as low as 4.5A volts.

ZXTP19060CZTA Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -410mV
the vce saturation(Max) is 410mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz

ZXTP19060CZTA Applications


There are a lot of Diodes Incorporated ZXTP19060CZTA applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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