2N5401TFR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The product comes in the supplier device package of TO-92-3.This device displays a 150V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.
2N5401TFR Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
the supplier device package of TO-92-3
2N5401TFR Applications
There are a lot of ON Semiconductor 2N5401TFR applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
