MPS2222RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS2222RLRA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
MPS2222RLRA Product Details
MPS2222RLRA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).As a result, the part has a transition frequency of 250MHz.The device exhibits a collector-emitter breakdown at 30V.
MPS2222RLRA Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA a transition frequency of 250MHz
MPS2222RLRA Applications
There are a lot of Rochester Electronics, LLC MPS2222RLRA applications of single BJT transistors.