BC68-25PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC68-25PA,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
420mW
Terminal Position
DUAL
Frequency
170MHz
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1.65W
Case Connection
COLLECTOR
Power - Max
420mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
170MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.822388
$0.822388
10
$0.775838
$7.75838
100
$0.731923
$73.1923
500
$0.690494
$345.247
1000
$0.651409
$651.409
BC68-25PA,115 Product Details
BC68-25PA,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 500mA 1V.A VCE saturation (Max) of 600mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.170MHz is present in the transition frequency.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
BC68-25PA,115 Features
the DC current gain for this device is 160 @ 500mA 1V the vce saturation(Max) is 600mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 170MHz
BC68-25PA,115 Applications
There are a lot of Nexperia USA Inc. BC68-25PA,115 applications of single BJT transistors.