2N5415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5415 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-39
Supplier Device Package
TO-39
Packaging
Bulk
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N5415
Power - Max
1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
200V
Current - Collector (Ic) (Max)
100mA
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$21.69970
$2169.97
2N5415 Product Details
Description
The 2N5415 is a -200V Silicon PNP Epitaxial Planar High Voltage Transistor for consumer and industrial applications. The transistor works well as a driver in high-voltage, low-current inverters, as well as switching and series regulators. Diodes and transistors both perform different types of switching operations in analog, digital, and mixed-signal circuits, and transistors can provide signal amplification when needed. At RF and microwave frequencies, many types of diodes and transistors are utilized, depending on the function and frequency range required.
Features
Collector-Emitter Volt (Vceo): 200V
Collector-Base Volt (Vcbo): 200V
Collector Current (Ic): 1.0A
Emitter-base voltage(Vebo = -4V)
hfe: 30-150 @ 50mA
Power Dissipation (Ptot): 1000mW
Current-Gain-Bandwidth (ftotal): 15MHz
Type: PNP
Applications
Consumer and industrial line-operated applications