BD13510S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD13510S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD135
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
50MHz
Power Dissipation-Max (Abs)
13W
BD13510S Product Details
BD13510S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 50MHz.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD13510S Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 50MHz
BD13510S Applications
There are a lot of ON Semiconductor BD13510S applications of single BJT transistors.