BC817K40E6327HTSA1 Overview

DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BC817K40E6327HTSA1 Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz

BC817K40E6327HTSA1 Applications

There are a lot of Infineon Technologies BC817K40E6327HTSA1 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting