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2N5686G

2N5686G

2N5686G

ON Semiconductor

2N5686G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5686G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-204AE
Surface MountNO
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation300W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating50A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5686
Pin Count2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 50A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A
Collector Emitter Breakdown Voltage80V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 8.51mm
Length 38.86mm
Width 26.67mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:318 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$28.612720$28.61272
10$26.993132$269.93132
100$25.465219$2546.5219
500$24.023791$12011.8955
1000$22.663954$22663.954

2N5686G Product Details

2N5686G Overview


DC current gain in this device equals 15 @ 25A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.A VCE saturation (Max) of 5V @ 10A, 50A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50A current rating.As a result, the part has a transition frequency of 2MHz.Maximum collector currents can be below 50A volts.

2N5686G Features


the DC current gain for this device is 15 @ 25A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
a transition frequency of 2MHz

2N5686G Applications


There are a lot of ON Semiconductor 2N5686G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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