2SA1576U3T106Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2SA1576U3T106Q Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
2SA1576U3T106Q Applications
There are a lot of ROHM Semiconductor 2SA1576U3T106Q applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
