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2SA1576U3T106Q

  • 2SA1576U3T106Q
  • 2SA1576U3T106Q

2SA1576U3T106Q

2SA1576U3T106Q

ROHM Semiconductor

2SA1576U3T106Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1576U3T106Q Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.204247 $0.204247
10 $0.192686 $1.92686
100 $0.181779 $18.1779
500 $0.171490 $85.745
1000 $0.161783 $161.783
2SA1576U3T106Q Product Details

2SA1576U3T106Q Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.

2SA1576U3T106Q Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA

2SA1576U3T106Q Applications


There are a lot of ROHM Semiconductor 2SA1576U3T106Q applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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