2PB1219AS,115 Overview

In this device, the DC current gain is 170 @ 150mA 10V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.An input voltage of 50V volts is the breakdown voltage.Product comes in SC-70 supplier package.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.Maximum collector currents can be below 500mA volts.

2PB1219AS,115 Features

the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the supplier device package of SC-70

2PB1219AS,115 Applications

There are a lot of Nexperia USA Inc. 2PB1219AS,115 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter