2SC2712-Y,LF Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 6V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 150mA.The emitter base voltage can be kept at 5V for high efficiency.As a result, the part has a transition frequency of 80MHz.As a result, it can handle voltages as low as 50V volts.In extreme cases, the collector current can be as low as 150mA volts.

2SC2712-Y,LF Features

the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz

2SC2712-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SC2712-Y,LF applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter