2N6040 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6040 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
75W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-8A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2N6040
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
20μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 16mA, 4A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
8A
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.64000
$0.64
500
$0.6336
$316.8
1000
$0.6272
$627.2
1500
$0.6208
$931.2
2000
$0.6144
$1228.8
2500
$0.608
$1520
2N6040 Product Details
2N6040 Overview
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 16mA, 4A.A 8A continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.In the part, the transition frequency is 4MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
2N6040 Features
the DC current gain for this device is 1000 @ 4A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 16mA, 4A the emitter base voltage is kept at 5V the current rating of this device is -8A a transition frequency of 4MHz
2N6040 Applications
There are a lot of ON Semiconductor 2N6040 applications of single BJT transistors.