2N6040G Overview

This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.A VCE saturation (Max) of 2V @ 16mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 8A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 4MHz.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

2N6040G Features

the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 4MHz

2N6040G Applications

There are a lot of ON Semiconductor 2N6040G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver