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STX117-AP

  • STX117-AP
  • STX117-AP

STX117-AP

STX117-AP

STMicroelectronics

STX117-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

STX117-AP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.0067
Subcategory Other Transistors
Max Power Dissipation 1.2W
Terminal Position BOTTOM
Terminal Form WIRE
Base Part Number STX117
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Power - Max 1.2W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 500
Height 4.5mm
Length 4.8mm
Width 3.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.475134 $0.475134
10 $0.448240 $4.4824
100 $0.422868 $42.2868
500 $0.398932 $199.466
1000 $0.376351 $376.351
STX117-AP Product Details

STX117-AP Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 1A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 2A volts.

STX117-AP Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V

STX117-AP Applications


There are a lot of STMicroelectronics STX117-AP applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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