JANTXV2N2222AUA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N2222AUA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-SMD, No Lead
Number of Pins
4
Supplier Device Package
4-SMD
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/255
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Number of Elements
1
Polarity
NPN
Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
800mA
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$44.37000
$44.37
10
$41.48900
$414.89
25
$38.37120
$959.28
JANTXV2N2222AUA Product Details
JANTXV2N2222AUA Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of 800mA volts is possible.
JANTXV2N2222AUA Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V the supplier device package of 4-SMD
JANTXV2N2222AUA Applications
There are a lot of Microsemi Corporation JANTXV2N2222AUA applications of single BJT transistors.