JANTXV2N2222AUA Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of 800mA volts is possible.

JANTXV2N2222AUA Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 4-SMD

JANTXV2N2222AUA Applications

There are a lot of Microsemi Corporation JANTXV2N2222AUA applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface