SBCP56-10T1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 130MHz.Input voltage breakdown is available at 80V volts.A maximum collector current of 1A volts can be achieved.

SBCP56-10T1G Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

SBCP56-10T1G Applications

There are a lot of ON Semiconductor SBCP56-10T1G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface