NJVMJD210T4G Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.The base voltage of the emitter can be kept at 8V to achieve high efficiency.The part has a transition frequency of 65MHz.Collector current can be as low as 5A volts at its maximum.
NJVMJD210T4G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
a transition frequency of 65MHz
NJVMJD210T4G Applications
There are a lot of ON Semiconductor NJVMJD210T4G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
