NJVMJD210T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD210T4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
12.5W
Pin Count
3
Element Configuration
Single
Power - Max
1.4W
Gain Bandwidth Product
65MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
25V
Current - Collector (Ic) (Max)
5A
Transition Frequency
65MHz
Collector Emitter Saturation Voltage
1.8V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
8V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.28745
$0.5749
NJVMJD210T4G Product Details
NJVMJD210T4G Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.The base voltage of the emitter can be kept at 8V to achieve high efficiency.The part has a transition frequency of 65MHz.Collector current can be as low as 5A volts at its maximum.
NJVMJD210T4G Features
the DC current gain for this device is 45 @ 2A 1V a collector emitter saturation voltage of 1.8V the vce saturation(Max) is 1.8V @ 1A, 5A the emitter base voltage is kept at 8V a transition frequency of 65MHz
NJVMJD210T4G Applications
There are a lot of ON Semiconductor NJVMJD210T4G applications of single BJT transistors.