BC550ABU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC550ABU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Additional Feature
LOW NOISE
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-W3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
BC550ABU Product Details
BC550ABU Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The part has a transition frequency of 300MHz.The device exhibits a collector-emitter breakdown at 45V.
BC550ABU Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 300MHz
BC550ABU Applications
There are a lot of Rochester Electronics, LLC BC550ABU applications of single BJT transistors.