2N6045G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6045G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 22 hours ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
75W
Peak Reflow Temperature (Cel)
260
Current Rating
8A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6045
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A 4V
Current - Collector Cutoff (Max)
20μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Continuous Collector Current
8A
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.83000
$0.83
50
$0.68640
$34.32
100
$0.56360
$56.36
500
$0.44938
$224.69
1,000
$0.36321
$0.36321
2N6045G Product Details
2N6045G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 3A 4V DC current gain.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.When VCE saturation is 2V @ 12mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.During maximum operation, collector current can be as low as 8A volts.
2N6045G Features
the DC current gain for this device is 1000 @ 3A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 12mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 8A
2N6045G Applications
There are a lot of ON Semiconductor 2N6045G applications of single BJT transistors.