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2N6045G

2N6045G

2N6045G

ON Semiconductor

2N6045G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N6045G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 75W
Peak Reflow Temperature (Cel) 260
Current Rating 8A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6045
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V
Current - Collector Cutoff (Max) 20μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Continuous Collector Current 8A
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.83000 $0.83
50 $0.68640 $34.32
100 $0.56360 $56.36
500 $0.44938 $224.69
1,000 $0.36321 $0.36321
2N6045G Product Details

2N6045G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 3A 4V DC current gain.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.When VCE saturation is 2V @ 12mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.During maximum operation, collector current can be as low as 8A volts.

2N6045G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

2N6045G Applications


There are a lot of ON Semiconductor 2N6045G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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