KSD2012YTU Overview

In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.A VCE saturation (Max) of 1V @ 200mA, 2A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 7V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 3A volts can be achieved.

KSD2012YTU Features

the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A

KSD2012YTU Applications

There are a lot of ON Semiconductor KSD2012YTU applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter