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2N6109G

2N6109G

2N6109G

ON Semiconductor

2N6109G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6109G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 7A
Frequency 10MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6109
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2.5A 4V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3.5V @ 3A, 7A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 3.5V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.92000 $0.92
50 $0.76360 $38.18
100 $0.62320 $62.32
500 $0.49266 $246.33
1,000 $0.39413 $0.39413
2N6109G Product Details

2N6109G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2.5A 4V.As it features a collector emitter saturation voltage of 3.5V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 3A, 7A.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.The part has a transition frequency of 10MHz.Maximum collector currents can be below 7A volts.

2N6109G Features


the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz

2N6109G Applications


There are a lot of ON Semiconductor 2N6109G applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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