2N6109G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6109G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
7A
Frequency
10MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6109
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2.5A 4V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3.5V @ 3A, 7A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
3.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
15.75mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.92000
$0.92
50
$0.76360
$38.18
100
$0.62320
$62.32
500
$0.49266
$246.33
1,000
$0.39413
$0.39413
2N6109G Product Details
2N6109G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2.5A 4V.As it features a collector emitter saturation voltage of 3.5V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 3A, 7A.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.The part has a transition frequency of 10MHz.Maximum collector currents can be below 7A volts.
2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V a collector emitter saturation voltage of 3.5V the vce saturation(Max) is 3.5V @ 3A, 7A the emitter base voltage is kept at 5V the current rating of this device is 7A a transition frequency of 10MHz
2N6109G Applications
There are a lot of ON Semiconductor 2N6109G applications of single BJT transistors.