2N6111G Overview

In this device, the DC current gain is 30 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is -7A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 10MHz.In extreme cases, the collector current can be as low as 7A volts.

2N6111G Features

the DC current gain for this device is 30 @ 3A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz

2N6111G Applications

There are a lot of ON Semiconductor 2N6111G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver