MPSA05RA Overview

DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MPSA05RA Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

MPSA05RA Applications

There are a lot of ON Semiconductor MPSA05RA applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter