PBSS4330X,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS4330X,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.6W
Terminal Form
FLAT
Frequency
100MHz
Base Part Number
PBSS4330
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.6W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS4330X,115 Product Details
PBSS4330X,115 Overview
DC current gain in this device equals 270 @ 1A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 6V can achieve high levels of efficiency.There is a transition frequency of 100MHz in the part.The breakdown input voltage is 30V volts.When collector current reaches its maximum, it can reach 3A volts.
PBSS4330X,115 Features
the DC current gain for this device is 270 @ 1A 2V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 300mA, 3A the emitter base voltage is kept at 6V a transition frequency of 100MHz
PBSS4330X,115 Applications
There are a lot of Nexperia USA Inc. PBSS4330X,115 applications of single BJT transistors.