2N6338G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6338G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
200W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
25A
Frequency
40MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6338
Pin Count
2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
40MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10A 2V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 2.5A, 25A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1.8V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$61.686800
$61.6868
10
$58.195094
$581.95094
100
$54.901032
$5490.1032
500
$51.793427
$25896.7135
1000
$48.861723
$48861.723
2N6338G Product Details
2N6338G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 10A 2V.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.A VCE saturation (Max) of 1.8V @ 2.5A, 25A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.This device has a current rating of 25A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 40MHz in the part.A maximum collector current of 25A volts is possible.
2N6338G Features
the DC current gain for this device is 30 @ 10A 2V a collector emitter saturation voltage of 1.8V the vce saturation(Max) is 1.8V @ 2.5A, 25A the emitter base voltage is kept at 6V the current rating of this device is 25A a transition frequency of 40MHz
2N6338G Applications
There are a lot of ON Semiconductor 2N6338G applications of single BJT transistors.