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2N6338G

2N6338G

2N6338G

ON Semiconductor

2N6338G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6338G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface MountNO
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation200W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating25A
Frequency 40MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6338
Pin Count2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product40MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 25A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10A 2V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.8V @ 2.5A, 25A
Collector Emitter Breakdown Voltage100V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage1.8V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 6V
hFE Min 50
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:369 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$61.686800$61.6868
10$58.195094$581.95094
100$54.901032$5490.1032
500$51.793427$25896.7135
1000$48.861723$48861.723

2N6338G Product Details

2N6338G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 10A 2V.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.A VCE saturation (Max) of 1.8V @ 2.5A, 25A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.This device has a current rating of 25A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 40MHz in the part.A maximum collector current of 25A volts is possible.

2N6338G Features


the DC current gain for this device is 30 @ 10A 2V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 2.5A, 25A
the emitter base voltage is kept at 6V
the current rating of this device is 25A
a transition frequency of 40MHz

2N6338G Applications


There are a lot of ON Semiconductor 2N6338G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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